Central Electronics 200V Broadband Transmitter- Exciter

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Sample text

5, a read sensor with low device resistance and high output is required as a reader for >2 Tbit/in2 because of impedance matching with preamplifiers to achieve a good high-frequency response. 5 plots the ΔRA values (resistance-area product, output of MR devices) of currently used MTJs with MgO barriers. The ΔRA reduces substantially with the decrease in RA (device resistance) due to the unavoidable formation of pin holes in thin MgO barriers of less than 1 nm. However, current-perpendicular-to-plane (CPP)-GMR devices that consist of all metallic layers can easily achieve low RA.

However, Co2 Fe-based Heusler alloys in CPP-GMR devices have better tolerance against interdiffusion with an Ag spacer layer at elevated temperatures. Therefore, highly spin polarized Co2 Fe-based Heusler alloys have the potential to act as the ferromagnetic electrodes of CPP-GMR devices. Co2 FeGe was predicted to be half-metal [14]. However, the L21 single phase was not experimentally obtained. 4 Change in spin polarization of Co2 Fe(Ge1−x Gax ) alloy as a function of x (Ga) content. 5 ) alloy.

2 K. 25 ) alloy. Here, we show the experimental results for the two typical alloys, Co2 Mn(Ge1−x Gax ) [15] and Co2 Fe(Ge1−x Gax ) alloys [14, 16]. Although L21 -ordered Co2 MnGe was predicted to be half-metal [17], there was no experimental evidence for high-spin polarization in Co2 MnGe [18, 19]. Our PCAR measurements demonstrated 59% spin polarization. The reason for the low-spin polarization was the DO3 disordering. A Co antisite, where a Mn site is replaced by a Co atom, induces a spin-down in-gap state, according to theoretical calculations [20].

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